Devices which have selenium as constituent parts thereof



l I '5 /0 roRauE oN/vur/N/-oor Pou/VDS 2 s 3 i m n n, m, l M or MPE m GLM m. M. 2 E c mum 2 2 I no? m..v 2 0 M .um E ssw. m Rw S E09. w, Eo TS.1v EAV. e PMM.. sa 8. VV l5 N.d Lv R 2 .Ee EU cl. GC C sm .m 5-@ Aug. 19, 1952 Patented Aug. 19, 1952 DEVICES WHICH HAVE SELENIUM AS CONSTITUENT PARTS THEREOF Carl E. Peters, University City, Mo., assigner to Vickers, Incorporated, a corporation of Michigall Application July 19, 1947, Serial No. 7 62,193

This invention relates to improvements in devices which have selenium as constituent parts thereof. More particularly this invention relates toA methods and apparatus for making improved devices which have selenium as constituent parts thereof.

It is therefore an object of the present invention to provide an improved method of making devices which have selenium as constituent parts thereof.

In the making of devices which have selenium as constituent parts thereof, and more particularly in the making of selenium rectifiers, it is customary to prepare a selenium-coated base plate and then form a counterelectrode on the surface of the seleniumcoating. According to generally accepted theory, a blocking layer forms or is formed on the surface of the selenium coating of the base plate, and that blocking layer provides desirable asymmetrical electrical properties for the rectifler. The counterelectrode and the base plate, which are formed of metal and which are resistive to wear and pressure, serve as the electrical contacts for the relatively fragile blocking layer. The resulting structure is referred to as a rectifying couple, and that couple can readily pass current in one direction and can strongly resist the flow of current in the opposite direction. These rectifying couples may be used individually, but it is customary to assemble a number of rectifying couples together to form a rectifier stack of the desired electrical capacity. Once assembled as a rectifier stack, the rectifying couples must be held in good electrical contact with each y other to minimize contact resistance between adjacent rectifying couples. The various rectifying couples of a rectifier stack are usually heldin assembled relation by means of a bolt that extends through openings in the centers of the rectifying couples and by a nut that is threaded onto the end of the bolt; and proper rotation of the bolt relative to the nut creates suiilcient pressure on adjacent retcifying couples to hold them in intimate electrical and physical contact. In this way it is possible to assure low contact resistance between adjacent rectifying couples in the rectifier stack, thus providing a, rectifier unit of high eiiiciency;

Once the proper setting of the nut and bolt of the rectifier stack has been attained, that setting is not disturbed. However, even though the initial setting of the nut and bolt of the rectifier stackv is not disturbed-the forces and pressures exerted on the individual rectifying couples will experience considerable changes as the rectier 16 Claims. ('Cl. 175-366) 2 stack heats and cools. This is due to the fact that the thermal coefficient of expansion of the bolt is not exactly the same as the thermal coefficients of expansion of the selenium coating or the base plate or the counterelectrode. In some instances the difference between the thermal coefcient of expansion of the bolt and the thermal coefficients of expansion ofthe selenium coating or the base plate or the counterelectrode is so great, and the overall length of the rectifier stack is so great, that the heat which is generated during the operation of the rectier stack will cause the rectifying elements to expand and 4create forces and pressures suiiciently large to electrical efliciency of the rectiiier stack is seriously reduced. In the absence of some device that can absorb, or minimize the effects of, the expansion which occurs during operation of the rectifier stack, the blocking layers of the rectifying couples can be impaired or destroyed; particularly where the initial forces and pressures on the rectifying couples are high, as they must be to maintain low contact resistance between adjacent rectifying couples. I

Efforts have been made to avoid the impairment or destruction of the blocking layers of rectifying couples in rectifier stacks, despite the expansion of those couples; and one of those efforts included the formation of each counterelectrode in such a way that a part of the selenium coating is bare, placing a washer of insulating material against the bare part of the selenium coating, and providing Va metal spring washer that bears against the counterelectrode of the rectifying couple and against the washer of insulating material. The washer of insulating material actsfto space adjacent rectifying couples apart, and the metal spring washer provides electrical contact between the counterelectrode of one rectifying couple and the base plate of an adjacent rectifying couple. With such a construction, expansion of the rectifying couples cannot force portions of the counterelectrode into the selenium coating and impair the blocking layer of any of the rectifying couples; because the washer of insulating materialrbears thev load and the counterelectrode is not subjected to excessive forces and pressures. In the event the washer of insulating material is pressed into the surface of the selenium coating, no impairment of the electrical efficiency of the rectifying couple will result since the washer can not conduct current to that portion of the selenium coating. Where rectifying couples are 3 made and equipped in this manner, those rectifying couples can be assembled to form rectifier stacks that expand and contract with no appreciable decrease of eiciency. However, the metal spring Washers are expensive, and their use tends to increase the labor involved in assembling the rectifier stacks. Moreover, the spring Washers are preferably slotted to give them sullcient flexibility, and the slots in those washers make it difficult to paint the rectifier stacks or to coat those stacks with moisture-proofing compounds. If the paint or moisture-proofing compound is sprayed or brushed onto the rectier stacks, the washers Will keep part of the counterelectrode from being painted or coated and yetY they Wil-l permit air, with its entrained moisture, to contact the counterelectrode. On the other hand, if the rectier stacks are dipped in the paint or the moisture-proofing compound, the paint may creep under the edges of the spring metal Washers and create a high contact resistance betvveenthe countereleotrode 'and the spring v,N Vasher.' The spring iva'shrsv are also not completely satisfactory rbeoalis'e 'they shieldJ a largepartjof the counter-electrode 'from -coolingla'ir currents; and in 'seine cases the eounterel'ectrode, which may be "of va lo'vv melting point metal, may rnelt and be forced through the "fblooking layer. Furthermore, the Jlrfetal spring Washers are not completelys'a'ti's'alotory becauseitis diicult to secure just the r'redlflire'd amount lf-'spring pressure Vfor each spring vla`sher since the thickness, cornpos'ition'ahdtenper of the metalorthose vvz'nslzlers` must be controlled,"vvithin,fiery close limits to provide yanyni'fo'rl'iity of 'springpressure for the Washers.` l n M l n Another of 'thee'vfeota to-arvoi`d impairment or destruction of the blocking layers of rectifying couples assembled invlfectier stacks, lincluded the positioning of "a dielectric material `between those portions ofthe selenium coatings and thoseportions of the counterelectrodes which Vexperience the greatestforces and pressures whenthe-rectifyingleleinents areassembled to `form 'a rectiiier stack. The dielectric -material served `as a cushion Aand insulator between certain 'portions of the selenium coating vrand certain portions 'of the counterelectrode; thus keeping Vthose fportions of the vcouni'ferelectrode from being pressed intoqthe surface of the selenium coating. vThe insertion of a dielectric material between the selenium coating and the counterelectrode avoids many of 'the disadvantages experienced with metal vspring Washers, but the insertion 'of the dielectric material isa time-consuming and expensive process. The insertion must 'be done manually, thus keeping V'the rectiers from being manufactured byautomatic machinery; Yand the insertion necessitates the provision of 'an additional element inthe rectifying couple. Moreover, lno "completely satisfactory dielectric `.ma-- terial lia's 'been found forinse'rtion between the seleniumcoatin'g'and the counterelectrode mica has too smooth a surface to facilitate its adherence to the counterelectrode, papery and fiber and ipla'sticsf 'can flose their effectiveness through 'recurrent heating of the rectier stacks, and Avarnishes and lacquers 'tend to soften and now when the rectifier stacks become heated. As a result, although the "inserted'dielectric material may initiallyserve to cushion and insulate certain portions of the counterelectrode from certain portions ofthe selenium coating, that material cannot maintain that cushioning and insulating action. Consequently, rectifying'couf ples which have dielectric materials inserted between the selenium coating and the counterelec trode experience an appreciable loosening of the rectifying couples in the rectier stack, thus increasing the Contact resistance between adjacent rectifying couples; or they experience a breakdown in the cushioning lor insulating action of the inserted dielectric materials, thus decreasing the ability of the rectifier to resist current flow in the inverse direction. For these and other reasons prior efforts, to prevent the impairment or l'destruction of the electrical characteristics of re'ctiiyin'g couples because of the expansion of those couples, have `not been satisfactory. The ypresent invention `provides a completely satisfactory method of avoiding the impairment or destruction of the electrical characteristics of recti'f'yi'ng couples, because or" the expansion of those couples, by rendering unimportant any interaction of the compressed portions of the selenium coating and the counterelectrode. Where this is done, high pressures can be restablished and maintained on the rectifying couples without im'- pairing the emciency of the rectifier stack, neven though the 'rectifying couples of the stack 'ex'- pand and contract. It is therefore an object of the present invention to provide a method 'of making seleniuin -lrectiying couples that renders unimportant any interaction between the "come pressed portions of the selenium coating and the ccunterelectrode. l

Th'e present invention 'makes unimportant v'any interaction. v'between `the compressed portions of the counterelectro'defand the 'selenium coating v`on the base 'plate by pe'rmitting 'the p'ortion of the base plate, `underlying the :compressed portions of me counterelectrode rand the 'selenium boating, to have or retain iTa hi'g-h contact A{reisst'a-llc'e with the selenium fcoatirlg, Where the base 'plate is made VVof a 'lm-forinilg 'r'neta'l "such as mgnesium, aluminum, tantalum or the like, 'thebase platev Will 'naturally forn'i'a junction `'o'f high Cconitact resistance with selenium; and 'by leaving' bare the portion of the base plate, underlying the compressed portions of the `counte'relectrode and 'the selenium coating, vvhr'le treatihgfthe lrest of the v base plate to minimize that -highjcontact resistance, 'it is Aposs-iglole ftok'eep variations in the electrical charac I ic's "of'ithe compressed portions o f the counterellectrode and 'the iserleniu'm vcoating -from affecting 'the 'electrical' character'isticsouf the rectifying couple. VNothi'i'lg'f"'i1"`e"e'd be added or inserted v"since base-plates'oftlzle .l'mforming metals "naturally have' the 'desired p'ro'perties. Moreover, the natur'alliilrn's'jon these base plates are metalliccomponds which 'are adherent to the base plate'sfard'are'butlittle'aieted by pressure or temperature. ksaresult, rectify.. ing couples madeA with'V this type Vof "b'a's'eplate can be assembled in rectifier "stacks "without .experiencing loosening lofthee'n'gagemert between the rectify'ingfelemeht's and/ithout experiencing changes in "the electrical 'characteristics `of 'the reel-,mer stacks. 1t ls therefore an object :ofthe present invention to 'imakebase i plates .ofmtals which ''natl'lfrally` ionf, Ihighiccntact vresistance junctionsA with, selenium, andl Vto leave iba-re 'the portions of those plates which underlie the-.compressed portions vof the selenium.

The present invention can alsoV make I'unimportant the-.interaction between the:` compressed portions of the vcounterelectrode and the selenium coating of base plates -iWhichY-arenot 'iof -lmformi-ng -metal; 'as f byf-forming f'apressure-'resistant and heat-resistant `'metallicicom!iourrdo'nfthe portions of those base plates which underlie the compressed portions of the selenium. The metallic compound will perform the same function performed by the bare portion of the nlm-forming metal of the base plates. In this Way,l the present invention can use many different metals to form base plates that avoid the difficulties experienced with prior efforts to obviate the impairment or destruction of the electrical Acharacteristics of rectifier stacks due to the expansion of the rectifying couples of those stacks. It is therefore an object of the present invention to provide a base plate wherein the part that underlies the compressed portions of the selenium coating has a metallic compound that forms a high contact resistance junction with selenium.

Other and further objects and advantages of the present invention should become apparent froman examination of the drawing and accompanying description.

In the drawing and accompanying description two preferred embodiments of the present invention are shown and described but it is to be understood that the drawing and accompanying description are for the purposes of illustration only and that the invention will be defined by the appended claims.

In the drawing Fig. 1 is a cross sectional View of a rectifying couple made in accordance with the principles and teachings of the present invention,

Fig. 2 is a cross sectional view of another rectifying couple made in accordance with the principles and teachings of the present invention.

Fig. 3 is a partially-sectioned, side elevational view of a rectifier stack made in accordance with the principles and teachings of the present invention, and

Fig. 4 is a chart showing the electrical characteristics of rectifying couples as pressures of varying intensity are exerted on them.

Referring to the drawing in detail, the numeral IIJ denotes a generally circular base plate which may be made of a film-forming metal such as magnesium, aluminum, tantalum, or the like. The base plate IIJ has a centrally disposed opening I2, and the opening I2 is large enough to telescope over a tube of insulating material, such as tube 34 in Fig. 3. As it is received from the supplier the metal, from which the base plate I can be formed by punching, cutting, or other suitable method, will have a thin film of metallic compound on the surfaces thereof. In the case of aluminum and magnesium, the films will be predominantly oxides; and in the case of other metals, the films may or may no-t be predominantly oxides.` In each instance, however, the film will form a high contact resistance junction with selenium. The upper surface of the base plate Ill may be brushed, scratched, etched, sandblasted, or otherwise roughened to facilitate the physical engagement between that surface and metals to be applied to that surface; but whether roughened or not, the surface of the base plate I0 will still form a film that will create a high contact resistance junction with selenium. A large portion of the surface of the base plate Il) is coated with a metal such as iron, nickel, bismuth or the like, which can form a low contact resistance junction with the metal of the base plate despite the film thereon and can also form a low contact resistance junction with selenium; and that portion of the base plate I0 is annular in form and is denoted by the numeral I I. The rest of the surface of the base plate II) is not covered with the said metal; and that portion oi' theA base plate III is also annular in form, and'it is denoted by the numeral'IS. The coating of said metal is denoted by the numeral I4, vand itis Iannular in form. A layer I6 of selenium overlies and is attached to the surfacev I I of base plate,

I0 and it also overlies and'is attached to the coating I4. The junction between the selenium layer I6 andthe surface II of base plate IIJ will have a high contact resistance, while the junction between the selenium layer I6 and the metal I4 will have a low contact resistance. The layer I6 of selenium will be quite thin so current can pass through that layer, despite the electrical resistivity of selenium; but the lateral dimensions of that layer will be such that little or no current will flow laterally through the layer I6. As a result, current flow through the layer I6 of selenium will be stratified, and as a result little or no current will flow through the portion of layer litt/hatv overlies the portion I3 of thesurface of base plate III. The layer I6 of selenium is continuous and it extends from the outer periphery of baseplate I0 to the opening I2 through that base plate. A counterelectrode I8, of Woods metal or other low-melting point metal is formed on the layer I6 of selenium, andthe counterelectrode I8 will protect the blocking layer that will form on the surface of the layer I6 of selenium.

The resulting structure, which is shown in cross section in Fig. 1, will operate as a rectifying couple andwill readily pass current in one directionwhile strongly resisting the passage of current in the opposite direction. When a number of these rectifying couples are assembled in the form of a rectifier stack, as shown in Fig. 3,v

washers 32 are positioned between the counterelectrodes I8 and base plates I0 of adjacent rectifying couples. The washers 32, which are usually of brass or other metal with high electrical conductivity, have dimensions which correspond to the dimensions of the portions I3 of the surfaces of base plates I0. As a result, the forces and pressures exerted by the washers 32 on the rectifying couples and the forces and pressures which the rectifying couples exert on the Washers 32 will be localized to areas on the rectifying couples which cannot appreciably affect the overall electrical resistance of the rectifier stack. Consequently, even if the metal of the counterelectrode I 8 were to be forced into that portion of layer I6 of selenium which overlies portion I3 of base plate I0, thus changing the electrical properties of the path from the counterelectrode to that portion of layer I6, the overall electrical properties of the path from the counterelectrode I8 to portion I3 of base plate I0 will be substantially unaffected. Accordingly, considerable forces and pressures can be exerted on the rectifying couples without changing their electrical characteristics; even where those forces and pressures cause an interaction between the portions of counterelectrode I8 and layer I6 which overlie portions I3 of base plate I0.

In the rectier stack shown in Fig. 3, the rectifying couples are mounted on a hollow tube of the retifying "co'uples c's's'ari7 that thy nut olt 336 be drawn lip tl'gh'tly toer ate a' heavy pressue bh -reb'tifyihg Yizofllplefs and the 'washers 312 between those "couples- 1 Where this ne, and where thefretier fstaek is s bs'eiint y heated by the 'rect ying action "o the burierlt passing therethrough, the frectify'ih'g couples n'd thew'a'shes 32 willf'iipan'dand V'additieha'lly i'n'creas'e the pressure the 'coun'ter electrodes "ITB of the relatif ng couples.r Those auditinal pressures will tenu' l't6 Yforce 'the 'Lnet'al of the coiitei'lectfode's I8 into Athe S'Llrfefce's f the selenium coatings "I6, thus interfering nwith the 'electrical characteristics "of 'these beatings. However, l'the pressures fare definitely localized; and any ycl'ziange in 'the elctrial characteristics of the coatings must j"cec'u' within'a" a'rea where such changes are unimportant. W "this fai'- raheemen-t, viilc'reases'ini-,lle essures ntlierectifyn'g uple'sjonsequt 'updnllatmg andfeX- p'aii'sin-f the rectifyiil'g couples, will jr'ller'elfy increase fthe internal 'st-rains on the 'rectiylfie couples and lon th'ebolt 36; fand the rec'tfyin'g couples and `the bolt willibec'apable of withstand'- infg 4tl'dse strains. Thefiln n the fportin I3 of base plate l is a compound of the met'aljof the baseV pl'ate 'It and will be tremendously strong and vvill befre'sistant to heat. nAs al'r'esult the increasedpres'sures 'will not beable to jcll'ar, crush, crumble for cause 'tnefnli-to now; 'instead that lin will resistthepressures as Vably as the parts of the rectifier stack. Consequently, vwhen "the rectier sta'ckcls t'w'ill'not eliperienc'e'a loosening oiith'e're'ctifyin'g couples norwill Ait'emlerience a change the 4contactresistance between adjacent 'rectifying couples.

f lInfFi'g. 2 'a niodied forni of 'rectifying 'couple is shown. In that couplepth'e vbase plate is denoted n'by the numeral 2li. This 'base plate Vis `formed Vroln a v'ncietaL 'su'o'hfas steel, which doe's nothave anini'tial fllmof Yresistive material,V as do magnesium, aluminum, tantalum ahdsimil'ar n'l'etals;V and it is therefore vdesirable to form 'a metallic vcompound on the sur'fa'ce `o'f the vbase plate 4Sill. That metallic compound 'denoted by theinunleral 2 6 and vit may lbe of any suitable material. VOne vsuch material is zinc -selenide whichV has `considerable compressive resistance and "considerableelectrical resistance. The -nu- IneralZ 4 'denotes a coating-of iron, nickel, bismuth, o'r other'inetal that'adh'eres Well 'to themetal of the base plate 'andalso adheres well to selenium. A'coating of selenium 28 overlies the Iayer-Nand the layer 215.` This coating 28 of selenium will adhere `Well to both layers '24' and 26, but 4it will for'm 'a junction of low electrical resistance with coating 24 while forming a junction of high electrical resistance with coatingl26. :Acounterelectrode 3U is Vprovided on thesurface'of theseleniuln coating 28, and that counterelectrode may -be made of Woods metalor similar lowlneltingpoint metal. The-rectif'yingcouple shown in Fig. 2 has a central opening, and that opening isldenoted by the numeral 22. This rectifying couple could 'be substituted foran'y of the rectiiy'ing couples show-nin the rectifier stack of FigJB. I

s iin the -case ofthe -r'ect'lfyin'g 'couple shown `i n"Fig`. Al, the base plate has a 'catingad cent the center thereof, which'fo'rils a'j'u'n'c'tio'n 1g contact resistar-i'ce with selenium; -and'tha't coating a he'atlr'sitait -and pressure-resistant metallic compound. Aecorfdingly, Vthe 'pressure which can be' eiirted "ii'ther'ectifyingfcouple oi Fig. v2, ashley hatng that"coupl vvlflilelit "is electrical characteristics f couple.A 'With base plates formed Vof some metals "it will be desirable to form fthe metallic compound by vcoating a 'I'netal onto the base Vplate and then converting that metal to a compound which forms a high vcol'ltat'LtY resistanceju-nction with selenium, but with base `plates 'of other metals the compound can be formed from the metal of the base plates.

Fig. 4 shows curves which indicate the eiect f pressure on 'the amount of inverse-current that passes through asymmetrical selenium rectifying couples. The 4curreibt 'is plotted along the vertical "coordinate o-Fa. 4; and'thetorque obtained by tightening nut at is :plotted along the nonzontal coordinate of Fig. 4. Three curves are plotted 'on the chart of Fig. 4, VVand those curves indicate how the inverse 'or leakage current increased "as Vthe torque increased. vCurve A was obtained by forming Ta rectifier stack from rectifying couples wherein the electrical characteristics 'of the couples were uniform across the entire area vof those couples; and increases in leakagecur'rent were 'excessive as the torque increased. Curve C` was 'obtained by forming a rectier stack which utilized resilient washers between the rectifying couples; 'and While Vthe increase in leakage current was smaller, it was still higher than desired. Curve B, which is by far the most desirable of the three curves, was obtainedby using the rectier stack shown in Fig. 3. Comparisonof `thesethree curves shows clearly that th'e'rect'ifying couples showninFigs. l-3 maintain leakagecurrents :at minimum levels despite variations in the pressure used on the rectifierfstack. g

The -annular coatings of iron, niekel, bismuth, andsimilar material canbe formed in a number of Ways. One way is to form a continuous-coating -andjthcn use an end :mill to remove part of thefcoating. Another way to mask a .part of the base plateand thenfcoat the rest 'of 'the plate byuelectrodepositing '-or 'spraying' the lmetal on. Stillanother way is to rmask partof the base plate and then exposefthe `rest vof the Ybase plate to vapors otthe metal; and lnethodv `is vparticularly-useful withbismuth. The seleniuincan be applied to thebaseplatein Aany of the `ways custflnllf'ly used intheartand the counterelectrode ca -n bev-applied to theselenium la-yer in any'of the ways'customarily used in the-art. V Ih forming selenium rectiflers which have dielectric material between the selenium coating and the counterelectrode, the base .plate is initially treatedtoenableall portions of its surface .to ifornln amlow contact resistance junction with selenium, the selenium coating -is applied to the base plate Ato'flprovide good `electrical Contact kover the entiresurfaceoffuthe rectienand then apart ofthe selenium surface Vvlaw/ered with the dl elctricrnateial. This rpractice-is not only cby fje "lonable because' Lit inserts materials Vin lthe rectifie'r'which'ceinnot withstand heat or pressure, butlit isobiectio'nablebecauseit employs needless steps andV I ieedlestV Cost. it takes metals which may naturally .possess-ith@ ability to form high contact 'resistance lunctions with Yselenium land destroys 'that ability, thus necessitating the additional fsteps 'and additional Ycost -of Iinserting the IdieIectricinater'iaI. V.The .present invention, -on the@ ther hand, utilltestna't .natural ability of the Yrri'etfal'to lform a high contact resistance junction withseleniul'n; ahdby doing so .provides a better and'ljless vexpensiveseleniuni rectifier.

Whereas lthe drawing andA accompanying description. have hov'vn'two 'preferred embodiments of the present 'inventan it should be obvious to those skilled in the art that various changes may be made in the form of the invention Without affecting the scope thereof.

What I claim is:

1. A rectifying couple that comprises an 'aluminum base plate, a film that comprises an aluminum compound and that is coextensive with said base plate, a coating on a portion of said base plate that overlies said iilm of aluminum compound and forms a loW contact resistance junction With selenium, avcoating of` selenium. on the said iilm andthe sai-d coating of said base plate, and a counterelectrode on said coating of selenium.

'2. A rectifyingl couple that comprises a magnesium base pla-te, a film that comprises a magnesium compound and that isvcoextensive with said base plate, a coat-ing on a portion of said base plate that overlies said lm of magnesium compound and forms a low contact resistance junction with selenium, a co-ating of selenium on the said nlm and the said coating of said base plate, and a -counterelectrode on said coating of selenium.

'3. A rectifying couple vthat comprises a tan- I 'and a counterelectrode on said coating of selenium.

4. A rectifying couple that comprises a base plate of film-forming metal, said base plate having a film thereon that is coextensive with said base plate, a coating on a portion of said base plate that overlies part of said lm yand that forms a low contact resistance junction with the Vmetal of said base plate and With selenium, a

coating of selenium on the said lm and the said coating on said base plate, and a counterelectrode on said coating of selenium.

5. A rectifying couple that comprises a base plate of nlm-forming metal, said base plate having a lm thereon that is coextensive With said base plate, a coating on one portion of said base plate that overlies part of said iilm and that is capable of forming a low contact resistance junction with the metal of said base plate and with selenium, a layer of selenium on the said iilm and the said coating of said base plate, and a counterelectrode on said layer of selenium, said coating being of nickel, iron, bismuth or the like.

6. A rectifying couple that comprises a filmforming base plate which has a film thereon that is capable of forming a high contact resistance junction with selenium and has a coating that overlies part of said film and is capable of forming a loW contact resistance junction with selenium, a coating of selenium on said film and coating of said base plate, and a counterelectrode on sai-d coating of selenium, said first coating being of nickel, iron, bismuth, or the like.

7. A rectifying couple that comprises a base plate, a layer of selenium adherent to and supported by said base plate, and a counterelectrode ori said layer of selenium, said base plate having a surface that is capable of coa-cting with selenium to form a low contact resistance junction and and having a second surf-ace that is capable of coacting with selenium to form a high contact resistance junction, said base plate being of a film-forming metal, the second said surface of Y 10 Y said base platebeing nlm-formed on said filmforming base plate, the first said surface of said base plate containing nickel, iron, bismuth or the like, said iirst surface' of said base plate overlying part of said second surface on said lmforming base plate and underlying part of said layer of selenium. Y

8. A rectifying couple that comprises a base plate, a layer of selenium adherent to and supported by said base plate, and a counterelectrode on said layer of selenium, said base plate having a surface that is capable of coating with selenium to form a low conta'ct resistance junction and having a second surface that is capable of coacting with selenium to form a high contact resistance junction, said base plate being of a nlm-forming metal, the second said surface of said film-forming base plate being film formed on said base plate, the first said surface of said base plate containing a metal, said irst surface of said base plate overlying part of the second said surface on said film-forming base plate and underlying part of said layer of selenium.

9. A rectifying couple that comprises a base plate, a layer of selenium adherent to and supported by said base plate, and a counterelectrode on said layer of selenium, said base plate having a surface that is capable of coaeting with selenium to form a low contact resistance junction and having a second surface that is capable of coacting with selenium to form a high contact resistance junction, said base plate having a metallic compound thereon which has metal of said base plate as the metallic component thereof, the said second surface of sai-d base plate being a part of said metallic compound, said first surface of said base plate overlying said metallic compound.

10. A rectifying couple that comprises a base plate, a layer of selenium adherent to and supported by said base plate, and a counterelectrode on said layer of selenium, said base plate having a surface that is capable of coacting v vith selenium to form a low contact resistance junction and having a second surface that is capable of coacting with selenium to form a high contact resistance junction, said second surface being zinc selenide, said first and second surfaces of said base plate underlying said layer of selenium.

11. A rectifying couple that comprises a base plate, a layer of selenium adherent to and supported by said base plate, and a counterelectrode on said layer of selenium, said base plate having a surface that is capable of coacting with selenium to form a low contact resistance junction and having a second surface that is capable of coacting with selenium to form a high contact resistance junction, said first surface containing nickel, iron, bismuth or the like, said second surface being zinc selenide, said iirst and second surfaces of said base plate underlying said layer of selenium.

12. The method of making a rectifying couple that comprises selecting a plate of film-forming metal that naturally has a film thereon which is capable of forming a high contact resistance junction with selenium, selecting a metal that ls capable of forming a low contact resistance junction with selenium, aiiixing said second metal to a portion of said plate and having the rest of said plate exposed, coating said exposed part of said plate and coating said second metal with selenium, and forming a counterelectrode on said selenium.

13. The method of making a rectifying couple that comprises selecting; aV base plate,v applying to one portion of said. basea metal that is.f capable of coacting with selenium. toz form alow con' tact resistance junction,V applying to another portion of said hasev plate a metallic compound that is capable of forming av high centactV resistance junction with selenium, forming a coatlng of selenium on said metal and on said metallic compound, and forming at counterelectrode on said selenium, saidmetal and said metallic. compound underlying said coating of selenium.

14. A rectifying couple that comprises a hase plate, a layer of selenium adherent to and supported by said base. plate, and a counterelec.- trode on said., layer of selenium, saidy base plate having a nlm-formed' surface thereon which is a metallic compound and which can conduct current. and which forms a high contact resistance junction with selenium, said base plate having another surface thereon that is a metal and coacts with selenium to form a low contact resistance junction, said rst and second surfaces of said base plate underlying said layer of selenium.

15. A rectifying couple that comprises a base plate, a layer of selenium adherent. to and supported by said base plate, and a counterelectrode on said layer of selenium, said base plate having a. surface that contains a metal and that coacts with selenium to form a 10W contact resistance junction and having a second surface that is a metallic compound and that conducts current and that coacts With selenium to form a high contact resistance junctionl the metal in said metallic compound of said second surface being 12 different from said metal in the first said surface of said base plate, said. rst and second surfaces of said base plate, underlying said layer of selenium.

1.6. A rectifying couple that comprises a base plate, a layer of seleniumK adherent to and supported by said base plate and a, counterelectrode on said layer of' selenium, said. base plate having a surface that. is capable of coacting with selenium to forma low contact resistance. junction and having a second surface that is capable of coacting with selenium to form. a high contact resistance junctiom said hase plate being of aluminum, the said second surface of said base. plate being an aluminum compound, said rfst. mentioned surface of saidv base plate overlying a part of said aluminumv compound, said rst mentioned surface. containing nickel, iron, bismuth or the, like.

CARL E. PETERS.

REFERENCES CITED The following references are of record in the le of this patent:

UNITED STATES PATENTS Number Name Date 2,088,949 Fekete Feb. 3, 1937 2,174,840 Robinson et al Oct. 3, 1939 2,188,079 Gottschalk et al. Jan. 23, 1940 2,221,596. Lorenz Nov. 12, 1940 2,221,614 Siebert Nov. 12, 1940 2,303,522 Addink et al Dec. 1, 1942 v2,328,440 Esseling et al Aug. 31, 1943 2,361,969 Saslow Nov. 7, 1944 

